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Thermal Annealing of Amorphous CoMnNiO Film on Oxidized Si Substrate

Published online by Cambridge University Press:  21 February 2011

Tan Hui
Affiliation:
Xinjiang Institute of Physics, Academia Sinica Wulumuqi 830011, Xinjiang, China
Qin Dong
Affiliation:
Xinjiang Institute of Physics, Academia Sinica Wulumuqi 830011, Xinjiang, China
Tao Mingde
Affiliation:
Xinjiang Institute of Physics, Academia Sinica Wulumuqi 830011, Xinjiang, China
Lin Chenglu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Zou Shichang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

Amorphous CoMnNiO film is doposited on oxidized Si substrate by RF sputtering equipment. Structure relaxation occurs in the amorphous CoMnNiO film when it is annealed below 550°C. Annealed in the range from 600°C to 1000°C, the amorphous film is converted into the polycrystal. After annealing in rich oxygen atmosphere, the amorphous film is transformed into spinel solid solution with stable structure and good electrical properties. The electrical conductivity will be reduced due to formation of low valence oxides when annealed without oxygen. As annealing temperature is higher than 1000°C, some spinel solid solutions will be resolved into low valence oxides CoO and NiO, reducing the conductivity of the CoMnNiO film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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