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Thermal And Mechanical Properties Of Polyimide Films

Published online by Cambridge University Press:  15 February 2011

S. T. Chen
S. T. Chen*
Affiliation:
P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

In recent years, polyimide film has become a commonly used insulator for microelectronic devices including advanced semiconductor chip and high density packaging. It has the advantages of low dielectric constant, thermal stability and low processing cost. In general, it is important to understand both the thermal and mechanical properties of a microelectronic material. Thermal and mechanical properties play very important roles in terms of determining the device structural integrity. Mismatch of material properties could cause feasibility and reliability problems. These properties are also essential for mechanical stress and thermal stress modeling studies. Biphenyldianhydride-Phenylenediamine (BPDA-PDA) and Pyromellitic Dianhydride-Oxydianiline (PMDA-ODA) are two commonly used polyimide films in electronic industry. Their thermal expansion coefficients and mechanical properties were studied and reported here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 381: Symposium F – Low-Dielectric Constant Materials--Synthesis and Applications in Micro. , 1995 , 141
Copyright
Copyright © Materials Research Society 1995

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References

1. U.S. Patent No. 5115090 (IBM Corp, Sachdev, K.G. et al).Google Scholar
2. Herminghaus, S., Boese, D., Yoon, D.Y. and Smith, B.A., Appl. Phys. Lett. Vol.59, 1043 (1991).Google Scholar
3. Boese, D., Herminghaus, S., Yoon, D.Y., Swalen, J.D. and Rabolt, J.F., Mat. Res. Soc. Symp. Proc., Vol.227, 379 (1991).Google Scholar
4. Custom built by IBM German Manufacturing Technology Center.Google Scholar
5. Makosch, G. and Solf, B., Proceedings of SPIE Vol.316, 42 (1981).Google Scholar
6. Kempf, J., Nonnenmacher, M. and Wagner, H.H., Appl. Phys. A47, 137 (1988).Google Scholar
7. Kempf, J. and Wagner, H.H., Topics in Current Physics Volume 37: Thin Film and Depth Profile Analysis, Editor: Oechsner, H., Springer-Verlag, p.87 (1984).Google Scholar
8. Elsner, G., Kempft, J., Bartha, J.W. and Wagner, H.H., Thin Solid Films, Vol.185, 189 (1991).Google Scholar
9. D.Y. Yoon. W. Parrish. Depero, L.E. and Ree, M., Mat. Res. Soc. Symp. Proc., Vol.227. 387 (1991).Google Scholar
10. Numata, S. and Kinjo, N., Poly. Eng. and Sci. Vol.28, 906 (1988).Google Scholar
11. Yoon, D.Y. (private communication).Google Scholar