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Theoretical and Experimental Analysis of the Low Dielectric Constant of Fluorinated Silica

Published online by Cambridge University Press:  15 February 2011

A. Demkov ,
R. Liu ,
S. Zollner ,
D. Werho ,
M. Kottke ,
R.B. Gregory ,
M. Angyal ,
S. Filipiak ,
L.C. Mcintyre Jr.  and
M.D. Ashbaugh
A. Demkov
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
R. Liu
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
S. Zollner
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
D. Werho
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
M. Kottke
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
R.B. Gregory
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
M. Angyal
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
S. Filipiak
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
L.C. Mcintyre Jr.
Affiliation:
Department of Physics, University of Arizona, Tucson, AZ
M.D. Ashbaugh
Affiliation:
Department of Physics, University of Arizona, Tucson, AZ
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Abstract

Fluorinated silica has a dielectric constant E in the range of 3—3.5, lower than that of F-free SiO2 (ω=4). The reasons behind this reduction are controversial. It is not known whether the electronic or ionic contributions to the overall screening are being diminished upon F doping. To shed more light on this phenomenon we have studied F-doped SiO2 with ab-initio modeling and various characterization techniques. FTIR transmission and spectroscopic ellipsometry give us information about the ionic and electronic contributions to ω Nuclear reaction analysis and Auger spectrometry measure F composition. XPS and FTIR provide information on the atomic structure and stability of the film. We use a large cell of cristobalite to model fluorinated silica theoretically. The ground state geometry is obtained via energy minimization. We calculate the vibrational density of states and find a localized mode (Si-F stretch), in good agreement with FTIR transmission. We analyze the effects of F incorporation on the dielectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 579: Symposium B – The Optical Properties of Materials , 1999 , 255
Copyright
Copyright © Materials Research Society 2000

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References

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