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Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Published online by Cambridge University Press:  01 February 2011

Zhixun Ma
Affiliation:
zxma@lbl.gov, Lawrence Berkeley National Lab, EETD, 1 Cyclotron Rd, Berkeley, CA, 94720, United States
Todd Holden
Affiliation:
THolden@brooklyn.cuny.edu, Queensborough Community College of CUNY, Physics Department, Bayside, NY, 11364, United States
Zhiming Wang
Affiliation:
zmwang@uark.edu, University of Arkansas, Department of Physics, Fayetteville, AR, 72701, United States
Samuel S. Mao
Affiliation:
SSMao@lbl.gov, Lawrence Berkeley National Lab, Berkeley, CA, 94720, United States
Gregory J. Salomo
Affiliation:
salamo@uark.edu, University of Arkansas, Department of Physics, Fayetteville, AR, 72701, United States
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Abstract

We have studied the temperature dependence of CER spectra of layered InGaAs QWRs and QDCs and found strain-induced splitting of lh and hh states occur in both InGsAs and GaAs layers. By fitting experimental data using Varshni law and Bose-Einstein type relation, various parameters are obtained, which are similar to those of bulk GaAs. We pointed out that a caution must be excised when extracting the electron-phonon interaction parameters by subtracting the thermal dilation part from the experimental data of the embedded semiconductor microstructures because in these structures the temperature-induced lattice-dilation may produce additional strain besides the lattice mismatch.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Bimberg, D., Grundmann, M., and Ledentsov, N.N., Quantum Dot Heterostructures (Wiley, Chichester, 1999)Google Scholar
[2] Wang, Zh. M., Mazur, Yu. I., Shultz, J. L., and Salamo, G. J., Mishima, T. D. and Johnson, M. B., J. Appl. Phys. 99. 033705 (2006)Google Scholar
[3] GutiÈrrez, H. R., Magalhães-Paniago, R., Bortoleto, J. R. R. and Cotta, M. A., Appl. Phys Lett. 85, 3581 (2004)Google Scholar
[4] Grundmann, M., Stier, O., and Bimberg, D., Phys. Rev. B 50, 14187 (1994)Google Scholar
[5] Pollak, Fred. H. and Shen, H., Materials Science and Engineering, R10, 275 (1993).Google Scholar
[6] Mazur, Yu. I., Ma, W. Q., Wang, X., Wang, Z. M., Salamo, G. J., Xiao, M., Mishima, T. D. and Johnson, M. B., Appl. Phys. Lett. 83, 987 (2003)Google Scholar
[7] Varshni, Y. P., Physica (Utrecht) 34, 149 (1967)Google Scholar
[8] Ortner, G., Schwab, M., and Bayer, M., Pässler, R., Fafard, S., Wasilewski, Z., and Hawrylak, P., and Forchel, A., Phys. Rev. B 72, 085328 (2005)Google Scholar
[9] ViÒa, L., Logothetidis, S. and Cardona, M., Phys. Rev. B 30, 1979 (1984)Google Scholar
[10] Lautenschlager, P., Carriga, M., Logothetidis, S., and Cardona, M., Phys. Rev. B 35, 9174 (1987)Google Scholar