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Published online by Cambridge University Press: 01 February 2011
Silicon oxide films with excess of Si were deposited by Low Pressure Chemical Vapor Deposition. The growth rate of the films and the excess of silicon in them have been modeled using a Face-centered Central Composite Design experiment. Samples annealed at 1100°C show luminescence (665 nm) at 80K and at room temperature associated to Si nanocrystals.
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