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Synthesis of Nano/Meso-Structured Silicon Films by Plasma Deposition

Published online by Cambridge University Press:  14 April 2016

William W. Hernández-Montero
Affiliation:
Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Apartado Postal 51 y 216, CP 72000, Tonantzintla, Puebla, México
Carlos Zúñiga-Islas
Affiliation:
Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Apartado Postal 51 y 216, CP 72000, Tonantzintla, Puebla, México
Francisco J. De la Hidalga-Wade
Affiliation:
Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Apartado Postal 51 y 216, CP 72000, Tonantzintla, Puebla, México
Wilfrido Calleja-Arriaga
Affiliation:
Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Apartado Postal 51 y 216, CP 72000, Tonantzintla, Puebla, México
Adrián Itzmoyotl-Toxqui
Affiliation:
Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Apartado Postal 51 y 216, CP 72000, Tonantzintla, Puebla, México
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Abstract

The characteristics of silicon films deposited by plasma depend strongly on the reactor parameters. In our experiments, the two-level factorial design was implemented. Pressure, silane and hydrogen flows were set at high and low values for the synthesis of silicon films. Results showed that the flows of silane and hydrogen played a key role, being the influence of pressure low. In particular, the samples at high level of hydrogen exhibited the lowest deposition rate and photosensitivity. On the other hand, the samples at low level of hydrogen showed crystalline regions and high deposition rate. For the lowest dilution ratio, nano/meso-structured silicon films were obtained, showing high photosensitivity and high roughness that increases the scattering of light. These characteristics of our films make them suitable to be used in photovoltaics.

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Copyright
Copyright © Materials Research Society 2016 

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