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Synthesis and Characterization of Copper Oxide Compounds

Published online by Cambridge University Press:  04 February 2014

K.P. Hering
Affiliation:
I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
A. Polity
Affiliation:
I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
B. Kramm
Affiliation:
I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
A. Portz
Affiliation:
I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
B.K. Meyer
Affiliation:
I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
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Abstract

The p-type conducting Copper-oxide compound semiconductors (Cu2O, CuO) provide a unique possibility to tune the band gap energies from 2.1 eV to the infrared at 1.40 eV into the middle of the efficiency maximum for solar cell applications. By a pronounced non-stoichiometry the electronic properties may vary from insulating to metallic conduction. They appear to be an attractive alternative absorber material in terms of abundance, sustainability, non-toxicity of the elements, and numerous methods for thin film deposition that facilitate low cost production. The synthesis and characterization of Cu2O thin films used as p-type absorbers in heterojunction solar cells will be reported. We discuss properties of the undoped non-stoichiometric Cu2O, controlled p-type doping by nitrogen, analysis of band offsets by X-ray photoelectron spectroscopy (XPS). In addition we show proof of concept for an increase in photovoltaic conversion efficiency in AlGaN/Cu2O heterostructures due to a more favorable band alignment.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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