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Surface Treatment with UV-Excited Radicals for Highly-Reliable Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

Takashi Ito
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakayama, Atsugi, Japan 243-01
Rinji Sugino
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakayama, Atsugi, Japan 243-01
Toshiro Nakanishi
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakayama, Atsugi, Japan 243-01
Satoshi Ohkubo
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakayama, Atsugi, Japan 243-01
Yasuyuki Tamura
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakayama, Atsugi, Japan 243-01
Kanetake Takasaki
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakayama, Atsugi, Japan 243-01
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Abstract

The UV-excited chlorine radical treatment effectively removed trace metal contaminants from Si ans SiO2 surfaces. We have found that this is predomonantly attributed to reactions between metal and chlorine, and metal oxides and silicon chloride, respectively. The former process was subjected to identify a breakdown spot on a thin gate dielectric film. After dielectric breakdown, a silicon crystallized filament as small as a few nanometers in diameter was formed and was selectively etched with chlorine radicals revealing a successively-etched region of the Si substrate. Nonuniformities of native exides on silicon were also detected using the same method. Gettering and etching wi:h a poly Si layer showed a possibility to make a gate dielectric film damage free and contamination free. Densification of native oxides formed after conventional wet cleaning of silicon was made with UV-excited oxygen radicals. Electrical characteristics of gate dielectrics treated with UV-excited chlorine and oxygen radicals showed high reliability.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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