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Surface Preparation of Single Crystals for ZnO Homoepitaxy

Published online by Cambridge University Press:  01 February 2011

Christian Neumann
Affiliation:
christian.neumann@physik.uni-giessen.de, Justus-Liebig-Universitaet Giessen, I. Physikalisches Institut, Heinrich-Buff-Ring 16, Giessen, 35392, Germany
Stefan Lautenschläger
Affiliation:
stefan.lautenschlaeger@physik.uni-giessen.de, Justus-Liebig-Universitaet Giessen, I. Physikalisches Institut, Giessen, 35392, Germany
Swen Graubner
Affiliation:
swen.graubner@physik.uni-giessen.de, Justus-Liebig-Universitaet Giessen, I. Physikalisches Institut, Giessen, 35392, Germany
Niklas Volbers
Affiliation:
niklas.volbers@physik.uni-giessen.de, Justus-Liebig-Universitaet Giessen, I. Physikalisches Institut, Giessen, 35392, Germany
Bruno K Meyer
Affiliation:
bruno.k.meyer@physik.uni-giessen.de, Justus-Liebig-Universitaet Giessen, I. Physikalisches Institut, Giessen, 35392, Germany
Jürgen Bläsing
Affiliation:
juergen.blaesing@physik.uni-magdeburg.de, Otto-von-Guericke-Universität Magdeburg, Institut für Experimentalphysik, Magdeburg, 39106, Germany
Alois Krost
Affiliation:
alois.krost@physik.uni-magdeburg.de, Otto-von-Guericke-Universität Magdeburg, Institut für Experimentalphysik, Magdeburg, 39106, Germany
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Abstract

For the homoepitaxial growth of ZnO it is inevitable to obtain a regular crystalline single crystal surface prior to growth. Commercially available, hydrothermally grown ZnO single crystals show amorphous surfaces due to mechanical cutting and polishing. Here we present the results of a thermal treatment on these ZnO single crystals. After annealing, a regular crystalline oxygen terminated surface can be obtained. Changes in surface roughness, residual defect concentration and electrical properties can be shown. The bulk crystallinity though was not affected.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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6. Sann, J., Hofstaetter, A., Pfisterer, D., Stehr, J., Meyer, B.K., phys. stat. sol (c) 4, 952 (2006)CrossRefGoogle Scholar

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