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Suppression of Boron Diffusion by Fluorine Implantation in Preamorphized Silicon

Published online by Cambridge University Press:  17 March 2011

Giuliana Impellizzeri
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
José H. R. dos Santos
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Salvatore Mirabella
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Francesco Priolo
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Enrico Napolitani
Affiliation:
INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
Alberto Carnera
Affiliation:
INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
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Abstract

We have investigated the role of fluorine in the reduction of transient enhanced diffusion (TED) and thermal diffusion (TD) of B in preamorphized Si layers implanted with F. For this purpose, we have employed B delta-doped layers, grown by molecular beam epitaxy (MBE), as markers for silicon self-interstitials (Is). We have shown that boron TED decreases with increasing amount of incorporated F up to the complete TED suppression. Furthermore, we have clearly demonstrated that the physical mechanism that suppresses the boron TED is not a B-F chemical bonding, but a strong interaction between F atoms and Is. In addition, we have seen that fluorine strongly reduces B diffusion also under Is thermal equilibrium concentration. Our results clearly show that the presence of F lowers the Is density very effectively, reducing the boron TED as well as the dopant diffusion under equilibrium conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

1. The International Technology Roadmap for Semiconductors, 2001.Google Scholar
2. Jain, S. C., Schoenmaker, W., Lindsay, R., Stolk, P. A., Decoutere, S., Willander, M. and Maes, H. E., J. Appl. Phys. 91, 8919 (2002) and references therein.CrossRefGoogle Scholar
3. Fahey, P. M., Griffin, P. B. and Plummer, J. D., Rev. Mod. Phys. 61, 289 (1989).CrossRefGoogle Scholar
4. Napolitani, E., Coati, A., Salvador, D. De, Carnera, A., Mirabella, S., Scalese, S. and Priolo, F., Appl. Phys. Lett. 79, 4145 (2001).CrossRefGoogle Scholar
5. Fortunato, G., Mariucci, L., Stanizzi, M., Privitera, V., Spinella, C., Coffa, S. and Napolitani, E., Mater. Sci. Semicond. Process. 4(5), 417 (2001).CrossRefGoogle Scholar
6. Wilson, R. G., J. Appl. Phys. 54, 6879 (1983).CrossRefGoogle Scholar
7. Downey, D. F., Chow, J. W., Ishida, E., Jones, K. S., Appl. Phys. Lett. 73, 1263 (1998).CrossRefGoogle Scholar
8. Park, Y-J. and Kim, J-J., J. Appl. Phys. 85, 803 (1999).CrossRefGoogle Scholar
9. Mokhberi, A., Kasnavi, R., Griffin, P. B. and Plummer, J. D., Appl. Phys. Lett. 80, 3530 (2002).CrossRefGoogle Scholar
10. Mubarek, H. A. W. El and Ashburn, P., Appl. Phys. Lett. 83, 4134 (2003).CrossRefGoogle Scholar
11. Impellizzeri, G., Santos, J. H. R. dos, Mirabella, S., Priolo, F., Napolitani, E. and Carnera, A., Appl. Phys. Lett. 84, 1862 (2004).CrossRefGoogle Scholar
12. Salvador, D. De, Napolitani, E., Mirabella, S., Impellizzeri, G., Priolo, F., Terrasi, A, Bisognin, G., Berti, M., Drigo, A. V. and Carnera, A., Nucl. Instrum. Meth. B 216, 286 (2004).CrossRefGoogle Scholar
13. Olson, G. L. and Roth, J. A., Mater. Sci. Rep. 3, 1 (1988)CrossRefGoogle Scholar
14. Bonafos, C., Omri, M., Mauduit, B. de, BenAssayang, G., Claverie, A., Alquier, D., Martinez, A. and Mathiot, D., J. Appl. Phys. 82, 2855 (1997).CrossRefGoogle Scholar

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Suppression of Boron Diffusion by Fluorine Implantation in Preamorphized Silicon
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