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Suppression of Boron Diffusion by Fluorine Implantation in Preamorphized Silicon

Published online by Cambridge University Press:  17 March 2011

Giuliana Impellizzeri ,
José H. R. dos Santos ,
Salvatore Mirabella ,
Francesco Priolo ,
Enrico Napolitani  and
Alberto Carnera
Giuliana Impellizzeri
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
José H. R. dos Santos
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Salvatore Mirabella
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Francesco Priolo
Affiliation:
MATIS-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
Enrico Napolitani
Affiliation:
INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
Alberto Carnera
Affiliation:
INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
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Abstract

We have investigated the role of fluorine in the reduction of transient enhanced diffusion (TED) and thermal diffusion (TD) of B in preamorphized Si layers implanted with F. For this purpose, we have employed B delta-doped layers, grown by molecular beam epitaxy (MBE), as markers for silicon self-interstitials (Is). We have shown that boron TED decreases with increasing amount of incorporated F up to the complete TED suppression. Furthermore, we have clearly demonstrated that the physical mechanism that suppresses the boron TED is not a B-F chemical bonding, but a strong interaction between F atoms and Is. In addition, we have seen that fluorine strongly reduces B diffusion also under Is thermal equilibrium concentration. Our results clearly show that the presence of F lowers the Is density very effectively, reducing the boron TED as well as the dopant diffusion under equilibrium conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C5.9
Copyright
Copyright © Materials Research Society 2004

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