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Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed Regions
Published online by Cambridge University Press: 22 February 2011
Abstract
At a growth temperature of 800°C, Co deposited on Si (111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less tfian a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.
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- Copyright © Materials Research Society 1991
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