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A Study on the Behavior of Water Absorption of SiOf Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition Method

Published online by Cambridge University Press:  21 March 2011

S. P. Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusung-Dong, Yusung-Gu, Daejon, 305-701, Korea
S. K. Choi
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusung-Dong, Yusung-Gu, Daejon, 305-701, Korea
Youngsoo Park
Affiliation:
Materials and Device Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea
Ilsub Chung
Affiliation:
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
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Abstract

Fluorinated silicon oxide (SiOF) films were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECRPECVD). The behavior of residual stress w as studied with water absorption. SiOF film showed compressive stress after deposition. The compressive stress increased after the exposure to room air. Fourier transformed infrared (FTI R) spectroscopy analysis was carried after the water absorption. However, the change of chemical bonding structure was not observed during the water absorption in this study. After the exposu re to room air, the films were kept in dry air. The residual stress returns to the initial value after 1 week. Considering the results of the residual stress and FTIR analysis, it is supposed that the water absorption in this study occurs entirely by physical adsorption of H2O molecules to Si-F bonds on the surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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