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Study on Structural, Electrical and Optical Properties of Microcrystalline Si:H and SiC:H Films

Published online by Cambridge University Press:  01 January 1993

F. Demichelis
Affiliation:
Dip. Fisica Politecnico Torino, ITALY
G. Crovini
Affiliation:
Dip. Fisica Politecnico Torino, ITALY
C.F. Pirri
Affiliation:
Dip. Fisica Politecnico Torino, ITALY
E. Tresso
Affiliation:
Dip. Fisica Politecnico Torino, ITALY
A. Rubino
Affiliation:
ENEA - Portici, Napoli,ITALY
G. Nobile
Affiliation:
ENEA - Portici, Napoli,ITALY
E. Terzini
Affiliation:
ENEA - Portici, Napoli,ITALY
G. Conte
Affiliation:
ENEA - Portici, Napoli,ITALY
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Abstract

We report results on a study on μc-Si:H and (μc-SiC:H films deposited by PECVD. The crystallinity fraction and the crystal sizes have been evaluated by X-ray diffractometry, Raman spectroscopy and Transmission Electron Microscopy(TEM). Infrared vibrational spectra of both μc-Si:H and |μc-SiC:H samples have been studied to obtain information on their structure. A comparison between the structure of the amorphous and diphasic amorphous-microcrystalline samples has been performed. Optical properties were obtained by transmission-reflectance and PDS measurements. Electronic transport mechanisms through the conductivity measurements in a wide range of temperatures (50-500 K) have been defined. Structural and electron density models have been discussed and used to interpret the experimental results.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. Kanicki, J. - "Amorphous and microcrystalline semiconductor devices: optoelectronic devices" (Artech House, Boston 1991)Google Scholar
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