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A Study of FeAl/AlAs/GaAs Interfaces Using Moiré-Fringe Contrast in a Transmission Electron Microscope

Published online by Cambridge University Press:  25 February 2011

J. E. Angelo
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN 55455.
J.N. Kuznia
Affiliation:
University of Minnesota, Department of Electrical Engineering, Minneapolis, MN 55455.
A.M. Wowchak
Affiliation:
University of Minnesota, Department of Electrical Engineering, Minneapolis, MN 55455.
P. I. Cohen
Affiliation:
University of Minnesota, Department of Electrical Engineering, Minneapolis, MN 55455.
W. W. Gerberich
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN 55455.
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Abstract

This paper describes the transmission electron microscope (TEM) investigations of the defect structure present at various FeAl/AlAs/GaAs interfaces. Although a systematic study has not yet been completed it is shown that by changing the growth temperature from 200°C to 300°C the growth morphology changes significantly. In-situ RHEED studies show the growth mode changes from layer-by-layer to island-like when the growth temperature is increased. TEM in both plan-view and cross-sectional modes is used to confirm these results. It is found that by increasing the growth temperature from 200°C to 300°C the growth mode switches from layer-by-layer (2D) with a continuous FeAl film, to island-like (3D) with significant numbers of “pin-holes”. A Moiré-fringe analysis is applied to determine the Burgers vector of the misfit dislocations. In both cases the interface between the FeAl and AlAs consists of a grid of misfit dislocations with [100] and [010] line directions whose Burgers vectors are [010] and [100] respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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A Study of FeAl/AlAs/GaAs Interfaces Using Moiré-Fringe Contrast in a Transmission Electron Microscope
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