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A Study in Selectivity Variations of WCMP Slurries Related to pH, ζ[zeta]-potential and Dilutions with De-ionized Water

Published online by Cambridge University Press:  01 February 2011

Davide Gianni
Affiliation:
davide.gianni@st.com, ST Microelectronics, Advanced R&D - Flash Memory Group, Via C.Olivetti, 2, Agrate Brianza, I-20041, Italy, +390396035873
Silvia Ardizzone
Affiliation:
silvia.ardizzone@unimi.it, Università degli Studi di Milano, Dipartimento di Chimica Fisica ed Elettrochimica, Via Golgi, 19, Milano, I-20133, Italy
Giuseppe Cappelletti
Affiliation:
giuseppe.cappelletti@unimi.it, Università degli Studi di Milano, Dipartimento di Chimica Fisica ed Elettrochimica, Via Golgi, 19, Milano, I-20133, Italy
Angelo Maspero
Affiliation:
angelo.maspero@uninsubria.it, Università dell'Insubria, Dipartimento di Scienze Chimiche ed Ambientali, Via Valleggio, 11, Como, I-22100, Italy
Damiano Monticelli
Affiliation:
damiano.monticelli@uninsubria.it, Università dell'Insubria, Dipartimento di Scienze Chimiche ed Ambientali, Via Valleggio, 11, Como, I-22100, Italy
Giulia Spinolo
Affiliation:
giulia.spinolo@st.com, ST Microelectronics, Advanced R&D - Flash Memory Group, Via C.Olivetti, 2, Agrate Brianza, I-20041, Italy
Norberto Masciocchi
Affiliation:
norberto.masciocchi@uninsubria.it, Università dell'Insubria, Dipartimento di Scienze Chimiche ed Ambientali, Via Valleggio, 11, Como, I-22100, Italy
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Abstract

Commercially-available WCMP slurries perform differently under diverse modifications: pH variations, dilutions, ageing, etc. In order to understand the physico-chemical basics of the mechanism and selectivity of these slurries, we have performed a number of measurements, including determination of effective CMP removal rates on blank and patterned wafers. The results of the performances of the different modifications have been compared, and a few optimized conditions and recipes derived. Our results surprisingly show that pH has a much greater influence on the removal rate of tungsten and silicon dioxide than the particles content, and that the way a certain pH is reached (or maintained) significantly affects the performances of the prepared slurries.

We propose that nitric acid can be used to dilute selective slurries in order to keep high removal rates. Indeed, diluting slurries with an acidic solution of the same pH maintains particle charges far from zero, and keeps oxidizing conditions stable. However, the effects of the acidic dilution of the slurries include a slight reduction of removal rate and a decrease in defect density

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1.ST internal dataGoogle Scholar
2. Gianni, D., Spinolo, G., Master in Material Science thesis, European School for Advanced Studies, Università degli Studi di Pavia, 2003 Google Scholar
3. Kaufman, F.B., Thompson, D.B, Broadie, R.E., Jaso, M.A., Guthrie, W.L., Pearson, D.J., Small, M.B., J. Electrochem. Soc., 138, 3490, 1991 CrossRefGoogle Scholar

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A Study in Selectivity Variations of WCMP Slurries Related to pH, ζ[zeta]-potential and Dilutions with De-ionized Water
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