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Structure, Morphology and Kinetics of the C49 to C54 Phase Transformation In Tisi2 Thin Films

Published online by Cambridge University Press:  10 February 2011

S Bocelli
Affiliation:
INFM - Istituto Nazionale per la Fisica della Materia Phys. Dept. A.Volta, via Bassi 6, I-27100 Pavia, Italy
F. Marabelli
Affiliation:
INFM - Istituto Nazionale per la Fisica della Materia Phys. Dept. A.Volta, via Bassi 6, I-27100 Pavia, Italy
M. Iannuzzi
Affiliation:
INFM - Istituto Nazionale per la Fisica della Materia Material Science Dept., via Emanueli 15, I-20126 Milano, Italy
L. Miglio
Affiliation:
INFM - Istituto Nazionale per la Fisica della Materia Material Science Dept., via Emanueli 15, I-20126 Milano, Italy
M. G. Grimaldi
Affiliation:
INFM - Istituto Nazionale per la Fisica della Materia Phys. Dept., Statale Primosole 50, I-95121 Catania, Italy
F. LaVia
Affiliation:
INFM - Istituto Nazionale per la Fisica della Materia CNR-IMETEM, Catania, Italy.
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Abstract

A series of fine grained C49 thin films were prepared by depositing Ti films on heated amorphous as well as crystalline silicon substrates.

Rapid thermal processing at temperatures between 700 and 775 °C was used to transform the metastable C49 phase into the stable C54. The evolution of the film structure and morphology during the transformation was investigated by sheet resistance, optical spectroscopy, diffuse reflectance and AFM measurements. One structural model which could account for our data is proposed according to crystallographic information present in the literature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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