Skip to main content Accessibility help
×
Home

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures

Published online by Cambridge University Press:  10 February 2011

N.D. Zakharov
Affiliation:
Max-Planck Institute of Microstructure Physics, 06120 Halle/Saale, Weinberg 2, zakharov@mpi-halle.de, GERMANY
P. Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, 06120 Halle/Saale, Weinberg 2
U. Gösele
Affiliation:
Max-Planck Institute of Microstructure Physics, 06120 Halle/Saale, Weinberg 2
R. Heitz
Affiliation:
Technical University of Berlin, Berlin, Germany
D. Bimberg
Affiliation:
Technical University of Berlin, Berlin, Germany
N.N. Ledentsov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
V.M. Ustinov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
B.V. Volovik
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
ZH.I. Alferov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
N.K. Polyakov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
V.N. Petrov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
V.A. Egorov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
G.E. Cirlin
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
Corresponding
E-mail address:
Get access

Abstract

Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 800°C, and 880°C were investigated by High Resolution Transmission Electron Microscopy (HRTEM). Extensive interdiffusion at 800°C leads to the formation of an InAs solid solution as well as InAs-enriched regions with extensions of ∼6nm, which exhibit two kinds of ordering. The ordering of InAs molecules occurred, respectively, in {110} planes inclined and parallel to the [001] growth direction. It is attributed to the energy gain from the reduced number of mixed Si-As and Si-In bonds. The sample grown at 800°C shows photoluminescence in the 1.3.µm region, which is tentatively attributed to the recombination of excitons localised in the ordered regions

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Fang, S.F., Adomi, K., Iyer, S., Morko, H., Zabel, H., Choi, C. and Otsuka, N. in Gallium arsenide and other compound semiconductors on silicon, J. AppI. Phys. 68, R3I–R58 (1990).CrossRefGoogle Scholar
2 Ledentsov, N.N., Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, July 21-26, 1996, Ed. by Scheffler, M. and Zimmermann, R., World Scientific, Singapoure, 1996, 1, p. 19.Google Scholar
3 Cirlin, G.E., Dubrovskii, V.G., Petrov, V.N., Polyakov, N.K., Korneeva, N.P., Demidov, V.N., Golubok, A.O., Masalov, S.A., Kurochkin, D.V., Gorbenko, O.M., Komyak, N.I., Ustinov, V.M., Egorov, A.Yu., Kovsh, A.R., Maximov, M.V., Tsatsul'nikov, A.F., Volovik, B.V., Zhukov, A.E., Kop'ev, P.S., Alferov, Zh.I., Ledentsov, N.N., Grundmann, M. and Bimberg, D., Semicond. Science and Technol. 13, 1262 (1998).CrossRefGoogle Scholar
4 Mano, T., Fujioka, H., Ono, K., Watanabe, Y., Oshima, M., Applied Surface Science 130–132, 760 (1998).CrossRefGoogle Scholar
5 Zakharov, N.D., Werner, P., Ustinov, V.M., Cirlin, G.E., Smolski, O.V., Denisov, D.V., Alferov, Zh.I., Ledentsov, N.N., Heitz, R. and Bimberg, D., 7-th International Symposium “Nanostructures: Physics and Technology”, St. Petersburg 1999, 216.Google Scholar
6 Zakharov, N.D., Werner, P., Heitz, R., Bimberg, D., Ledentsov, N.N., Ustinov, V.M., Denisov, D.V., Alferov, Zh.I., Cirlin, G.E. in Semiconductor Quantum Dots, edited by Lee, H., Moss, S., Norris, D., and Ila, D. (Mater. Res. Soc. Proc. 571, Pittsburgh, PA, 1999), p.247.Google Scholar
7 Heíz, R., Ledentsov, N.N., Bimberg, D., Egorov, A.Yu., Maximov, M.V., Ustinov, V.M., Zhukov, A.E., Alferov, Zh.I., Cirlin, G.E., Soshnikov, I.P., Zakharov, N.D., Werner, P., and Gösele, U., Applied Physics Letters 74, p. 1701 (1999).Google Scholar
8 Kilaas, R., Proc. 45th Annual EMSA Meeting, edited by Bailey, G.W., San Francisco Press, San Francisco 1987, p. 66.Google Scholar
9 Matthews, J.W., Blakeslee, A.E., J.Cryst.Growth 27, 118 (1974).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 6 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 22nd January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-rm8z7 Total loading time: 0.261 Render date: 2021-01-22T23:12:29.465Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *