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Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  15 February 2011

Kazushi Amanuma
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki 216, Japan
Takashi Hase
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki 216, Japan
Yoicht Mtyasaka
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki 216, Japan
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Abstract

Structural and electrical properties were investigated for chemically prepared SrBi2Ta2O9(SBT) thin films on Pt/Ti/SiO2/Si substrates. Good ferroelectric properties were obtained with a Pt top electrode: Pr=10.0μC/cm2 and Ec-34kV/cm. Au top electrodes resulted in smaller Pr. However, no fatigue was observed up to 109 switching cycles regardless of the top electrode material. Grains were spherical, not columnar, and the average grain size was 200nm. A marked structural change took place in the bottom Pt/Ti electrode during film preparation. The SIMS analysis indicates the reaction between Bi and Pt

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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