Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-559fc8cf4f-dxfhg Total loading time: 0.433 Render date: 2021-03-04T07:42:14.523Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD

Published online by Cambridge University Press:  28 February 2011

R. Flückiger ,
J. Meier ,
G. Crovini ,
F. Demichelis ,
F. Giorgis ,
C.F. Pirri ,
E. Tresso ,
J. Pohl ,
V. Rigato ,
S. Zandolin  and
F. Caccavale
R. Flückiger
Affiliation:
Institut de Microtechnique, Rue A.L. Breguet 2, CH-2000 Neuchâtel, Suisse.
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.L. Breguet 2, CH-2000 Neuchâtel, Suisse.
G. Crovini
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
F. Demichelis
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
F. Giorgis
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
C.F. Pirri
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
E. Tresso
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
J. Pohl
Affiliation:
Universitat Konstanz, Postfach 5560/X916, D-78434 Konstanz 1, Deutschland.
V. Rigato
Affiliation:
Lab. INFN of Legnaro, Via Romea 4, Padova, Italy.
S. Zandolin
Affiliation:
Lab. INFN of Legnaro, Via Romea 4, Padova, Italy.
F. Caccavale
Affiliation:
Dept. Physic Univ. of Padova, Italy.
Get access

Abstract

Microcrystalline silicon films deposited by plasma methods have an optical absorption for photon energies above 2.0 eV lower than a-Si:H films and can be efficiently doped with boron or phosphorus. The most widely used deposition technique is the 13.56 MHz PECVD. However quite recently µc-Si:H films were grown at high deposition rates by the 70 MHz PECVD. In this work the authors report on a comparison between µc-Si:H films deposited by both 70 MHz and 13.56 MHz techniques. Particular attention has been devoted to differences and similarities between structural, compositional and electrical properties of the films deposited with the two systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 751
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1 Moustakas, T.D., Weitz, D.A., Prestridge, E.B., Friedman, R., "Amorphous Silicon Technology" (Mat. Res. Soc. Symp. Proc., Pittsburg, Pennsylvania, 1985), vol. 38, p. 401.Google Scholar
2 Finger, F., Carius, R., Hapke, P., Prasad, K. and Fluckiger, R., "Amorphous Silicon Technology-1993" (Mat. Res. Soc. Symp. Proc., Pittsburg, Pennsylvania, 1993), vol. 283, p. 471.Google Scholar
3 Flückiger, R., Meier, J., Keppner, H., Götz, M. and Shah, A., "Proc. of the 23rd IEEE Photovoltaic Spec. Conf." (Louisville, Kentucky, 1993), p. 839.Google Scholar
4 Kanicki, J., "Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices" (Artech House, London, 1991) vol. 1.Google Scholar
5 Meier, J., Flückiger, R., Keppner, H. and Shah, A., Appl. Phys. Lett. 65, 860 (1994).CrossRefGoogle Scholar
6 Meier, J., Fluckiger, R., Keppner, H., Götz, M. and Shah, A., "Proc. of the 11 th EC Photovoltaic Conference" (Amsterdam, 1994), p. 1237.Google Scholar
7 Mishima, Y., Miyazaki, S., Hirose, M., Osaka, Y., Phil. Mag. B 46, 1 (1982).CrossRefGoogle Scholar
8 Matsuda, A., J. Appl. Phys. 59/60, 767 (1983).Google Scholar
9 Tsai, C. C., "Amourphous Silicon and Related Materials", Ed. Fritzsche, H. (World Sc. Publ. Comp:, 1988) p. 123.Google Scholar
10 Fluckiger, R., Meier, J., Keppner, H., Kroll, U., Shah, A., Greim, O., Morris, M., Pohl, J., Hapke, P. and Carius, R., "Proceeding of the 11th EC Photovoltaic Conference" (Montreux, 1992) p. 617.Google Scholar
11 Madan, A., Rava, P., R: Schropp, E. I., Von Roedern, B., Appl. Surf. Science, 70/71, 716 (1993).CrossRefGoogle Scholar
12 Curtins, H., Wyrsch, N. and Shah, A. V., Electronics Lett. 23 (5), 228 (1987).CrossRefGoogle Scholar
13 Scherrer, P., Nachr. Goettinger Gesell. 98 (1918); Zsigmondy's Kolloidchemie 3rd Ed., p. 394.Google Scholar
14 Iqbal, Z., Veprek, S., Webb, A. P., Capezzuto, P., Sol. St. Comm. 37, 993 (1981).CrossRefGoogle Scholar
15 Heintze, H., Zedlitz, R., J. Non-Cryst. Solids 164–166, 55 (1993).CrossRefGoogle Scholar
16 Kroll, U., Ziegler, Y., Meier, J., Keppner, H. and Shah, A., "Amorphous Silicon Technology-1994" (Mat. Res. Soc. Proc., Pittsburg, Pennsylvania, in press).Google Scholar
17 Hollenstein, Ch., Kroll, U., Howling, A.A. and Dutta, J., "Proc. 11th Phot. Solar Energy Conf." (Montreux, 1992).Google Scholar
18 Prasad, K., Ph.D. thesis, Institute of Microtechnology, University of Neuchâtel, 1991.Google Scholar
19 Flückiger, R., Meier, J., Shah, A., Catana, A., Brunel, M., Nguyen, H. V., Collins, R. W. and Carius, R., "Amorphous Silicon Technology-1994" (Mat. Res. Soc. Symp. Proc., Pittsburg, Pennsylvania, in press).Google Scholar
20 Simon, I., McMahon, H.O., J. Chem. Phys. 21, 23 (1953).CrossRefGoogle Scholar
21 Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Phil. Mag. B 68, 329 (1993).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 4th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *