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Stress Induced Void Nucleation in Narrow Aluminum Alloy Lines

Published online by Cambridge University Press:  15 February 2011

P. Børgesen ,
M. A. Korhonen ,
C. Basa ,
W. R. LaFontaine ,
B. Land  and
C.-Y. Li
P. Børgesen
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
M. A. Korhonen
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
C. Basa
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
W. R. LaFontaine
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
B. Land
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
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Abstract

The stress induced failure of passivated aluminum based metallizations is the combined result of the stress induced void nucleation and growth of voids. The present work investigates the dependence of the void nucleation on aging temperature and cooling rate. Narrow Al, Al(0.2%Cu) and Al(2%Si) lines of different widths were fabricated by lift-off and passivated with various thicknesses of Si3N4. After a 400°C anneal, the specimens were cooled directly to the selected aging temperature and aged for up to 1100 hours. Void nucleation was found to occur predominantly during the initial cool-down. The rate of nucleation varied in quite different ways with the combination of aging temperature and cooling rate for the different alloys, which is consistent with a grain boundary sliding controlled nucleation mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 143
Copyright
Copyright © Materials Research Society 1991

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References

[1]: Li, C.-Y., Børgesen, P., and Sullivan, T. D., accepted for publication in Appl. Phys. Lett.Google Scholar
[2]: Børgesen, P., Korhonen, M. A., and Li, C.-Y., in prep.Google Scholar
[3]: Li, C.-Y., Black, R. D., and LaFontaine, W. R., Appl. Phys. Lett. 53 (1988) 31 CrossRefGoogle Scholar
[4]: Korhonen, M. A., Paszkiet, C. A., and Li, C.-Y., J. Appl. Phys. 70 (1991) 8083 Google Scholar
[5]: Yue, J. T., Funsten, W. P., and Taylor, R. V., Proc. 23rd Int. Reliab. Phys. Symp. (1985) 125Google Scholar
[6]: Korhonen, M. A., LaFontaine, W. R., Børgesen, P., and Li, C.-Y., accepted for publication in J. Appl. Phys.Google Scholar
[7]: Paszkiet, C. A., Børgesen, P.,Korhonen, M. A., and Li, C.-Y., to be publishedGoogle Scholar
[8]: Børgesen, P., Li, C.-Y., Basa, C., and Sullivan, T. D., to be publishedGoogle Scholar
[9]: Hart, E. W., Acta Metall. 15 (1967) 1545 CrossRefGoogle Scholar
[10]: Korhonen, M. A., Børgesen, P., and Li, C.-Y., these proceedingsGoogle Scholar

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