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Strategy for the Integration of PLZT Thin Films on Base-Metal Foils for High Voltage Embedded Passives

Published online by Cambridge University Press:  26 February 2011

Beihai Ma
Affiliation:
bma@anl.gov, Argonne National Laboratory, Energy Systems Division, 9700 S. Cass Ave, Bldg. 212, Argonne, IL, 60439, United States, 630-252-9961
U. Balachandran
Affiliation:
balu@anl.gov, Argonne National Laboratory, Energy Systems Division, Argonne, IL, 60439, United States
David Y Kaufman
Affiliation:
dykaufman@gmail.com, Argonne National Laboratory, Energy Systems Division, Argonne, IL, 60439, United States
Krishna Uprety
Affiliation:
uprety@anl.gov, Argonne National Laboratory, Energy Systems Division, Argonne, IL, 60439, United States
Corresponding
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Abstract

Evolution of electronic devices towards higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). A “film-on-foil” approach is the most viable fabrication method. A high permittivity of lead lanthanum zirconate titanate (PLZT) thin film was coated on nickel foil by chemical solution deposition. Such a prefabricated capacitor sheet can be embedded into a PWB. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. To eliminate this parasitic effect, conductive buffer layer of lanthanum nickel oxide (LNO) was coated by chemical solution deposition on nickel foil. We produced PLZT film-on-foil capacitors with capacitance densities as high as 1.5 μF/cm2 and breakdown field strength >1.4 MV/cm. With the desirable volumetric character, PLZT film-on-foil capacitors hold particular promise for use in high voltage embedded passives.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Strategy for the Integration of PLZT Thin Films on Base-Metal Foils for High Voltage Embedded Passives
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