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Strain Relaxation in Epitaxial Heterostructures: Sensitivity of High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  25 February 2011

M. S. Goorsky
Affiliation:
Dept. of Materials Science and Engineering, UCLA, Los Angeles, CA
S. T. Horng
Affiliation:
Dept. of Materials Science and Engineering, UCLA, Los Angeles, CA
S. R. Sriffler
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY.
C. S. Stanis
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY.
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Abstract

Comparison of high resolution x-ray diffraction and transmission electron microscopy measurements of Si-based heterostructures demonstrates that diffraction is much more sensitive to strain relaxation than previously reported. This study used as-grown and annealed Si1-x Gex structures grown on (001) Si by UHV/CVD. (004), (113), and (115) rocking curves were employed. Using the TEM measurements as a quantitative guide, relaxation was observed in rocking curves when the misfit dislocation line density was as low as 1 μ-1. Also, interference fringes strongly depend on the presence of interfacial defects. At higher dislocation densities, the diffraction peak from the epitaxial layer broadens considerably but does not shift to a position that represents complete relaxation. Broadening of the substrate diffraction peak also occurs, which is due to dislocations that loop into the substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1 ) Hu, S.M., J. Appl. Phys. 69, 7901 (1991).CrossRefGoogle Scholar
2 ) Matthews, J.W. and Blakeslee, A.E., J. Crystal Growth 27, 118 (1974).Google Scholar
3 ) People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985); erratumCrossRefGoogle Scholar
People, R. and Bean, J. C., Appl. Phys. Lett. 49, 229 (1986).CrossRefGoogle Scholar
4 ) Gourley, P. L., Biefield, R.M., and Dawson, L.R., Appl. Phys. Lett. 47, 482 (1985).CrossRefGoogle Scholar
5 ) Temkin, H., Gershoni, D. G., Chu, S. N. G., Vandenberg, J. M., Hamm, R. A., and Panish, M. B., Appl. Phys. Lett. 55, 1668 (1989).CrossRefGoogle Scholar
6 ) Fritz, I. J., Gourley, P. L., and Dawson, L. R., Appl. Phys. Lett. 51, 1004 (1987).CrossRefGoogle Scholar
7 ) Kamigaki, K., Sakashita, H., Kato, H., Nakamaya, M., Sano, N., and Terauchi, H., Appl. Phys. Lett. 49, 1071 (1987).CrossRefGoogle Scholar
8 ) Orders, P.J. and Usher, B.I., Appl. Phys. Lett. 50, 980 (1987).CrossRefGoogle Scholar
9 ) Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., J. Vac. Sci. Technol. A2, 436 (1984).CrossRefGoogle Scholar
10 ) Anderson, N.G., Laidig, W.D., and Lin, Y.F., J. Electron. Mater. 14, 187 (1985).CrossRefGoogle Scholar
11 ) Fritz, I.J., Appl. Phys. Lett. 51, 1080 (1987).CrossRefGoogle Scholar
12 ) Stiffler, S.R., Stanis, C.L., Goorsky, M.S., Chan, K.K., and deFresart, E., J. Appl. Phys. 71, 4820 (1992).CrossRefGoogle Scholar
13 ) Iyer, S.S., unpublished.Google Scholar
14 ) Chem, C.H., Wang, K.L., Bai, G., and Nicolet, M.-A., in Silicon Molecular Beam Epitaxy, edited by Bean, J.C., Iyer, S.S., and Wang, K.L. (Mater, Res. Soc. Proc. 220, Pittsburgh, PA (1991) pp. 175180.Google Scholar
15 ) Bede Scientific, Ltd. Model 200 with Channel Cut Collimator.Google Scholar
16 ) Leiberich, A. and Levkoff, J., J. Vac. Sci. Technol. B8, 422 (1990).CrossRefGoogle Scholar
17 ) Chen, Y.C., Bhattacharya, P.K., and Singh, J., J. Vac. Sci. Technol. B10, 769 (1992).CrossRefGoogle Scholar
18 ) Zaumseil, P., Winter, U., Cembali, F., Servidori, M., and Sourek, Z., Phys. Stat. Sol. (a) 100, 95 (1987).CrossRefGoogle Scholar

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