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Strain in Coherent Ge Quantum Islands on Si Measured by Transmission Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

Chuan-Pu Liu
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, 1110W. Green ST., Urbana, IL 61801
Peter D. Miller
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, 1110W. Green ST., Urbana, IL 61801
William L. Henstrom
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, 1110W. Green ST., Urbana, IL 61801
J. Murray Gibson
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, 1110W. Green ST., Urbana, IL 61801
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Abstract

We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent “abrupt displacement” approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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Strain in Coherent Ge Quantum Islands on Si Measured by Transmission Electron Microscopy
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