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Steady-State Photoconductivity in Undoped Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Jeffrey Zhaohuai Liu  and
S. Wagner
Jeffrey Zhaohuai Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

An analytical expression for the thermal activation energy of the steady-state photoconductivity is shown to agree with experimental data in a range of temperature and generation rate for undoped hydrogenated amorphous silicon (a-Si:H). This agreement supports our suggestion that the commonly observed small activation energy of the photoconductivity in undoped a-Si:H originates in the strong temperature dependence of the quasi-Fermi level for electrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 193
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Simmons, J.G. and Taylor, G.W., Phys. Rev. B 4, 502(1971); G.W. Taylor and J.G. Simmons, J. Non-Cryst. Solids, 8–10, 940(1972).Google Scholar
2. Rose, Albert, Concepts in Photoconductivity and Allied Problems (R.E. Krieger, Huntington, NY, 1978).Google Scholar
3. Spear, W.E., Loveland, R.J., and Al-Sharbaty, A., J. Non-Cryst. Solids, 15, 410(1974).CrossRefGoogle Scholar
4. Liu, J.Z. and Wagner, S., Phys. Rev. B 39, (May 1989), in press.Google Scholar
5. Slobodin, D., Aljishi, S., Schwarz, R., and Wagner, S., in Materials Issues in Applications of Amorphous Silicon Technology, Mat. Res. Soc. Proc., vol.49, ed. by Adler, D., Madan, A., and Thompson, M.J. (MRS, Pittsburgh, 1985), p. 153.Google Scholar
6. Shen, D.S., Aljishi, S., Smith, Z E., Conde, J.P., Chu, V., and Wagner, S., in Amorphous Silicon Semiconductors-Pure and Hydrogenated, Mat. Res. Soc. Proc., 95, ed. by Madan, A., Thompson, M., Adler, D., and Hamakawa, Y. (MRS, Pittsburgh, 1987), p. 95; D.S. Shen, Ph. D. dissertation, Princeton University, 1988.Google Scholar
7. The temperature coefficient δ of EC can be approximated as half of that of the optical gap Eg. dEgd(kT)≈5 around room temperature for a-Si:H. See, Cody, G.D., in Semiconductors and Semimetals, 21 B, ed. by Pankove, J.I. (Academic Press, New York, 1987), p. 11.Google Scholar
8. This value (≈1.4) of dEF/d(kT)≡β for a-Si:H is taken from: Spear, W.E., Allan, D., LeComber, P., and Ghaith, A, Philos. Mag. B 41, 419(1980). β in undoped a-Si:H typically is small because the dark Fermi level is pinned by the D+/0 and D0/- states.CrossRefGoogle Scholar