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Stability and Crystallization of Amorphous Semiconductor Multilayers
Published online by Cambridge University Press: 25 February 2011
Abstract
We discuss recent measurements of relaxation, interdiffusion and crystallization in amorphous hydrogenated semiconductors and insulators prepared as periodic multilayers. The stability of multilayer structures depends upon temperature, repeat distance and the nature of the materials. Crystallization of amorphous silicon in amorphous silicon/amorphous silicon dioxide layers is inhibited when the silicon thickness is reduced below 20 nm.
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- Copyright © Materials Research Society 1988
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