Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon

Published online by Cambridge University Press:  28 February 2011

S.N. Kumar ,
G. Chaussemy ,
P. Roura  and
A. Laugier
S.N. Kumar
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
G. Chaussemy
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
P. Roura
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
Get access

Abstract

Techniques of low-temperature photoluminescence, Auger electron spectroscopy, and X-ray photoelectron spectroscopy are used to study the residual defects remaining after the rapid thermal annealing of ion-implantation induced damage in As+ implanted (100) silicon. Rapid thermal annealing resulted in the electrical activation of a major portion of arsenic in the implanted zone, but a shallow region confined within a depth of =200 Å from the surface contained As complexed with Si and O atoms. Surface characterization results agree with the observed degradation in transport properties of the diodes constructed on the shallow N+/P As+ implanted B doped p-Si wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 215
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1. Tamura, M., Horiuchi, M., Ito, T., and Abe, T., Appl. Phys. Lett. 52, 1212 (1988).Google Scholar
2. Cass, T.R. and Reddi, V.G.K., Appl. Phys. Lett. 23, 268 (1973).CrossRefGoogle Scholar
3. Hirao, T., Inoue, K., Takayanagi, S., Yaegashi, Y., Appl. Phys. Lett. 31, 505 (1977).CrossRefGoogle Scholar
4. Tamura, M., Natsuaki, N., Miyao, M., Tokuyama, T., in Proceedings of the 5th Internat. conference on Ion Implantation in Semiconductors and Other Materials. Boulder, (Plenum, New York 1977) p. 391.Google Scholar
5. Chaussemy, G., Canut, B., Kumar, S.N., Barbier, D., and Laugier, A. in Fundamentals of Beam-Solid Interactions and Transient Thermal Procesine, edited by Aziz, M.J., Rehn, L.E., and Stritzker, B. (Mater. Res. Soc. Proc. 100, Pittsburgh, PA 1988) pp. 695–700.Google Scholar
6. Kumar, S.N., Chaussemy, G., Canut, B., Barbier, D., and Laugier, A. in Proc. Europ. Mater. Res. Soc., Strasbourg, 1988, Photon. Beam and Plasma Assisted Processing Fundamentals and Technology, (Appl. Surf. Science, in press).Google Scholar
7. Chaussemy, G., Canut, B., Barbier, D., Remram, M., Joly, J.F., Pivot, J., and Laugier, A., in Proc. Europ. Mater. Res. Soc., Strasbourg, June 1987 (Les Editions Physique, XV, Paris 1987) p. 545.Google Scholar
8. Joly, J.F., Mayet, L., Remram, M., Chaussemy, G., Barbier, D., and Laugier, A., in seventh Europ. Photovoltaic Solar Energy Conf., Sevilla, Spain (Reidel, 1987) p. 933.CrossRefGoogle Scholar
9. Chaussemy, G., Kumar, S.N., Canut, B., Barbier, D., and Laugier, A., unpublished.Google Scholar
10. Thewalt, M.L.W., Can. J. Phys. 55, 1463 (1977).CrossRefGoogle Scholar
11. Suezawa, M. and Sumino, K., Phys. Status Solidi A 78, 639 (1983).CrossRefGoogle Scholar
12. Sauer, R., Weber, J., Stoltz, J., Weber, E.R., Kusters, K. H-., and Alexander, H., Appl. Phys A 36, 1 (1985).CrossRefGoogle Scholar
13. Lukes, F., Surf. Sci. 30, 91 (1972).CrossRefGoogle Scholar
14. Wagner, C.D., Riggs, W.M., Davis, L.E. and Moulder, J.F., Handbook of X-ray Photoelectron Spectroscopy. Ed. Muilenberg, G.E. (Perkin-Elmer, Eden Prairie, MN 1979).Google Scholar
15. Davis, L.E., MacDonald, N.C., Palmberg, P.W., Riach, G.E., and Weber, R.E., Handbook of Auger Electron Spectroscopy, edited by Muilenberg, G.E. (Perkin Elmer, Eden Prairie, MN 1979).Google Scholar
16. Banholzer, W.F. and Burrel, M.C., Surf. Sci. 176, 125 (1986).CrossRefGoogle Scholar
17. Hollinger, G. and Himpsel, F.J., Appl. Phys. Lett. 44, 93 (1984).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 6 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 28th January 2021. This data will be updated every 24 hours.

1 Cited by
Hostname: page-component-898fc554b-wphb9 Total loading time: 0.268 Render date: 2021-01-28T07:50:39.566Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *