Published online by Cambridge University Press: 28 February 2011
Techniques of low-temperature photoluminescence, Auger electron spectroscopy, and X-ray photoelectron spectroscopy are used to study the residual defects remaining after the rapid thermal annealing of ion-implantation induced damage in As+ implanted (100) silicon. Rapid thermal annealing resulted in the electrical activation of a major portion of arsenic in the implanted zone, but a shallow region confined within a depth of =200 Å from the surface contained As complexed with Si and O atoms. Surface characterization results agree with the observed degradation in transport properties of the diodes constructed on the shallow N+/P As+ implanted B doped p-Si wafers.
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