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Spectral Sensitivities of X-Ray Diffraction to the Roughness of Si/SiO2 Interfaces

Published online by Cambridge University Press:  21 February 2011

K.W. Evans-Lutterodt
AT&T Bell Laboratories Murray Hill, NJ 07974
Mau-Tsu Tang
S.R.R.C, Taiwan R.O.C.
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Results from X-ray diffraction studies of the morphology of the growing Si(001 )/SiO2 interface are presented. We show the evolution of the root mean square roughness as a function of the growth variables, and we try to go beyond the root mean square parametrization of the interface by measuring the spectral distribution of interface fluctuations. Within our current experimental sensitivies we cannot resolve any fluctuations with a finite in-plane momentum transfer.

Research Article
Copyright © Materials Research Society 1996

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