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Spatially Resolved Characterization of Electromigration-Induced Plastic Deformation in al (0.5WT% CU) Interconnect

Published online by Cambridge University Press:  11 February 2011

R.I. Barabash
Affiliation:
Metals & Ceramics Divisions, Oak Ridge National Laboratory, Oak Ridge TN 37831
G.E. Ice
Affiliation:
Metals & Ceramics Divisions, Oak Ridge National Laboratory, Oak Ridge TN 37831
N. Tamura
Affiliation:
Advanced Light Source, 1 Cyclotron Road, Berkeley CA 94720
J.R. Patel
Affiliation:
Advanced Light Source, 1 Cyclotron Road, Berkeley CA 94720
B.C. Valek
Affiliation:
Dept. Materials Science & Engineering, Stanford University, Stanford CA 94305
J. C. Bravman
Affiliation:
Dept. Materials Science & Engineering, Stanford University, Stanford CA 94305
R. Spolenak
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 3, D-7056 Stuttgart, Germany
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Abstract

Electromigration during accelerated testing can induce early stage plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in-situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Spatially Resolved Characterization of Electromigration-Induced Plastic Deformation in al (0.5WT% CU) Interconnect
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