Skip to main content Accessibility help
×
Home
Hostname: page-component-684bc48f8b-g7stk Total loading time: 0.396 Render date: 2021-04-12T20:10:13.771Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs

Published online by Cambridge University Press:  10 February 2011

N. A. Bert
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
V. V. Chaldyshev
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
N. N. Faleev
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
A. E. Kunitsyn
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
V. V. Tret'yakov
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
D. I. Lubyshev
Affiliation:
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
B R. Semyagin
Affiliation:
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
Get access

Abstract

We have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200°C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Smith, F.W., Calawa, A.R., Chen, C.L., Mantra, M.J., and Mahoney, L.J., Electron Dev.Lett. 9, 77 (1988).CrossRefGoogle Scholar
2. Kaminska, M., Liliental-Weber, Z., Weber, E.R., George, T., Kortright, J.B., Smith, F.W., Tsang, B.Y., and Calawa, A.R., Appl.Phys.Lett. 54, 1831 (1989).CrossRefGoogle Scholar
3. Melloch, M.R., Mahalingam, K., Otsuka, N., Woodall, J.M., and Warren, A.C., J.Cryst.Growth 111, 39 (1991).CrossRefGoogle Scholar
4. Bert, N.A., Veinger, A.I., Vilisova, M.D., Goloshchapov, S.I., Ivonin, I.V., Kozyrev, S.V., Kunitsyn, A.E., Lavrentieva, L.G., Lubyshev, D.I., Preobrazhenskii, V.V., Semyagin, B.R., Tretyakov, V.V., Chaldyshev, V.V., and Yakubenya, M.P., Phys.Solid State 35, 1289 (1993).Google Scholar
5. Bert, N.A., Chaldyshev, V.V., Goloshchapov, S.I., Kozyrev, S.V., Kunitsyn, A.E., Tretyakov, V.V., Veinger, A.I., Ivonin, I.V., Lavrentieva, L.G., Vilisova, M.D., Yakubenya, M.P., Lubyshev, D.I., Preobrazhenskii, V.V., and Semyagin, B.R., in Physics and Applications of Defects in Advanced Semiconductors, edited by Manasreh, M.O., von Bardeleben, H.J., Pomrenke, G.S., and Lannoo, M. (Mat. Res. Soc. Symp. Proc. 325, 1994), pp.401406.Google Scholar
6. Mahalingam, K., Otsuka, N., Melloch, M.R., and Woodall, J.M., Appl.Phys.Lett. 60, 3253 (1992).CrossRefGoogle Scholar
7. Melloch, M.R., Otsuka, N., Mahalingam, K., Chang, C.L., Kirchner, P.D., Woodall, J.M., and Warren, A.C., Appl.Phys.Lett. 61, 177 (1992).CrossRefGoogle Scholar
8. Cheng, T.M., Chang, C.V., Chin, A., Huang, M.F., and Huang, J.H., Appl.Phys.Lett. 64, 2517 (1994).CrossRefGoogle Scholar
9. Bergh, A.A. and Dean, P.J., Light-Emitting Diodes. (Clarendon Press, Oxford, 1976).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 4 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 12th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *