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Solution-Processed Oxide Films, Devices, and Integrated Circuits

Published online by Cambridge University Press:  26 February 2011

Jeremy T Anderson
Affiliation:
anderjer@oregonstate.edu, Oregon State University, Chemistry, 153 Gilbert Hall, Corvallis, OR, 97331-4003, United States
Douglas A. Keszler
Affiliation:
douglas.keszler@oregonstate.edu, Oregon State University, Chemistry, 153 Gilbert Hall, Corvallis, OR, 97331-4003, United States, 5417376736, 5417456369
Stephen T Meyers
Affiliation:
meyerste@onid.orst.edu, Oregon State University, Chemistry, 153 Gilbert Hall, Corvallis, OR, 97331-4003, United States
Hai Q Chiang
Affiliation:
chiang@eecs.oregonstate.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
David Hong
Affiliation:
hongda@engr.orst.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
Rick E Presley
Affiliation:
presley@engr.orst.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
John F Wager
Affiliation:
jfw@eecs.orst.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
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Abstract

A distinct class of precursor chemistries has been developed for solution-phase deposition of oxide thin films. Rapid liquid-to-solid conversions are facilitated by using high nuclearity species and labile inorganic ligands to promote fast condensation reactions. Consequently, applied deposition strategies differ from conventional sol-gel and surface mediated growth reactions. Select oxide materials have been incorporated in transistor devices and circuits as evidence of thin-film quality and proof of function.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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