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Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

Published online by Cambridge University Press:  28 February 2011

B.J. Robinson
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1
B.T. Chilton
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1
P. Ferret
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1
D.A. Thompson
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1
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Abstract

Single strained layer structures of up to 30 nm of Si1-xGex. on (100) Si and capped with 30-36 nm of Si have been amorphized by implantation with 120 keV As . The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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