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Site-Control Technology for InAs Quantum Dot Formation by Direct Deposition of Indium Nano-Dots with a Nano-Jet Probe
Published online by Cambridge University Press: 01 February 2011
We propose a new nano-probe-assisted technique which enables the formation of site-controlled InAs quantum dots (QDs). High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated by using a specially designed atomic-force-microscope (AFM) probe (the Nano-Jet Probe). This developed probe has a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. By applying a voltage pulse between the pyramidal tip and the sample, In clusters were extracted from the reservoir tank within the stylus through the aperture, resulting in the In nano-dot formation. These In nano-dots can be directly converted to InAs QD arrays by subsequent irradiation of arsenic flux.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.29
- Copyright © Materials Research Society 2004