Skip to main content Accessibility help
×
Home

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects

Published online by Cambridge University Press:  01 February 2011

Masashi Uematsu
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan
Get access

Abstract

The transient enhanced diffusion (TED) of high-dose implanted P is simulated taking into account Ostwald ripening of end-of-range (EOR) defects. First, we integrated a basic diffusion model based on the simulation of in-diffusion, where no implanted damages are involved. Second, from low-dose implantation, we developed a model for TED due to {311} self-interstitial (I) clusters involving Ostwald ripening and the dissolution of {311} clusters. Third, from medium-dose implantation, we showed that P-I clusters should be taken into account, and during the diffusion, the clusters are dissolved to emit self-interstitials that also contribute to TED. Finally, from high-dose implantation, EOR defects are modeled and we derived a formula to describe the time-dependence for Ostwald ripening of EOR defects, which is more significant at higher temperatures and longer annealing times. The simulation satisfactorily predicts the TED for annealing conditions, where the calculations overestimate the diffusion without taking Ostwald ripening into account.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Stolk, P. A., Gossmann, H.J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Poate, J. M., Luftman, H. S., and Haynes, T. E., J. Appl. Phys. 81, 6031 (1997).CrossRefGoogle Scholar
2. Jones, K. S., Prussin, S., and Weber, E. R., Appl. Phys. A 45, 1 (1988).CrossRefGoogle Scholar
3. Uematsu, M., J. Appl. Phys. 82, 2228 (1997).CrossRefGoogle Scholar
4. Yoshida, M., Arai, E., Nakamura, H., and Terunuma, Y., J. Appl. Phys. 45, 1498 (1974).CrossRefGoogle Scholar
5. Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Eaglesham, D. J., and Gossmann, H.J., Appl. Phys. Lett. 68, 2395 (1996).CrossRefGoogle Scholar
6. Uematsu, M., Jpn. J. Appl. Phys. 36, L982 (1997); J. Appl. Phys. 83, 120 (1998).CrossRefGoogle Scholar
7. Chao, H. S., Griffin, P. B., Plummer, J. D., and Rafferty, C. S., Appl. Phys. Lett. 69, 2113 (1996).CrossRefGoogle Scholar
8. Schroer, E. and Uematsu, M., Jpn. J. Appl. Phys. 38, 7 (1999); M. Uematsu, Jpn. J. Appl. Phys. 38, 6188 (1999).CrossRefGoogle Scholar
9. Keys, P. H., Jones, K. S., Law, M. E., Puga-Lambers, M., and Cea, S. M., MRS Spring Meeting 2001, J5.5. Google Scholar
10. Uematsu, M., J. Appl. Phys. 84, 4781 (1998).CrossRefGoogle Scholar
11. Choi, P. S., Su, T., Chang, R. D., Chu, P. K., and Kwong, D. L., Process Physics and Modeling in Semiconductor Technology (1996) Electrochem. Soc. Proc. vol. 96-4, p. 149.Google Scholar
12. Pelaz, L., Gilmer, G. H., Gossmann, H.J., Rafferty, C. S., Jaraiz, M., and Barbolla, J., Appl. Phys. Lett. 74, 3657 (1999).CrossRefGoogle Scholar
13. Bonafos, C., Mathiot, D., and Claverie, A., J. Appl. Phys. 83, 3008 (1998); E. Lampin, V. Senez, and A. Claverie, J. Appl. Phys. 85, 8137 (1999).CrossRefGoogle Scholar
14. Chao, H. S., Crowder, S. W., Griffin, P. B., and Plummer, J. D., J. Appl. Phys. 79, 2352 (1996).CrossRefGoogle Scholar
15. Uematsu, M., Jpn. J. Appl. Phys. 37, 5866 (1998).CrossRefGoogle Scholar
16. Uematsu, M., Jpn. J. Appl. Phys. 38, L1213 (1999).CrossRefGoogle Scholar
17. Oehrlein, G. S., Ghez, R., Fehribach, J. D., Gorey, E. F., Sedgwick, T. O., Cohen, S. A., and Deline, V. R., Proc. 3th Int. Conf. Defects in Semicond., eds. Kimerling, L. C. and Parsey, J. M. Jr, (Metallurgical Society of AIME, Warrenda, PA, 1984) p. 539.Google Scholar
18. Uematsu, M., Jpn. J. Appl. Phys. 38, 6188 (1999).CrossRefGoogle Scholar
19. Uematsu, M., Jpn. J. Appl. Phys. 38, 3433 (1999); 39, 1006 (2000); 39, 1608 (2000).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 3 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 23rd January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-7fh6l Total loading time: 0.608 Render date: 2021-01-23T04:15:40.113Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *