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Simulation of Stress Generation during GaN Lateral Epitaxial Overgrowth

Published online by Cambridge University Press:  17 March 2011

Zhaohua Feng ,
Edward G. Lovell ,
Roxann L. Engelstad ,
Thomas F. Kuech  and
Susan E. Babcock
Zhaohua Feng
Affiliation:
Computational Mechanics Center, Mechanical Engineering Department Chemical Engineering Department Materials Science and Engineering DepartmentUniversity of Wisconsin, Madison, WI 53706, U. S. A.
Edward G. Lovell
Affiliation:
Computational Mechanics Center, Mechanical Engineering Department Chemical Engineering Department Materials Science and Engineering DepartmentUniversity of Wisconsin, Madison, WI 53706, U. S. A.
Roxann L. Engelstad
Affiliation:
Computational Mechanics Center, Mechanical Engineering Department Chemical Engineering Department Materials Science and Engineering DepartmentUniversity of Wisconsin, Madison, WI 53706, U. S. A.
Thomas F. Kuech
Affiliation:
Chemical Engineering Department Materials Science and Engineering DepartmentUniversity of Wisconsin, Madison, WI 53706, U. S. A.
Susan E. Babcock
Affiliation:
University of Wisconsin, Madison, WI 53706, U. S. A.
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Abstract

To facilitate an understanding of defect production in gallium nitride during lateral epitaxial overgrowth, computer models have been developed to simulate the complete mechanical stress and strain fields. The virtual process included the deposition of a GaN seed layer on a sapphire substrate followed by a silicon dioxide stencil mask through which, and over which, the GaN product layer evolved and then cooled down to room temperature. Lattice mismatch and thermal strain were continuously assessed. Shear stresses on different crystallographic planes were analyzed to predict dislocation generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.15
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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