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Simulation of Stress Generation during GaN Lateral Epitaxial Overgrowth

Published online by Cambridge University Press:  17 March 2011

Zhaohua Feng
Affiliation:
Computational Mechanics Center, Mechanical Engineering Department Chemical Engineering Department Materials Science and Engineering Department University of Wisconsin, Madison, WI 53706, U. S. A.
Edward G. Lovell
Affiliation:
Computational Mechanics Center, Mechanical Engineering Department Chemical Engineering Department Materials Science and Engineering Department University of Wisconsin, Madison, WI 53706, U. S. A.
Roxann L. Engelstad
Affiliation:
Computational Mechanics Center, Mechanical Engineering Department Chemical Engineering Department Materials Science and Engineering Department University of Wisconsin, Madison, WI 53706, U. S. A.
Thomas F. Kuech
Affiliation:
Chemical Engineering Department Materials Science and Engineering Department University of Wisconsin, Madison, WI 53706, U. S. A.
Susan E. Babcock
Affiliation:
University of Wisconsin, Madison, WI 53706, U. S. A.
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Abstract

To facilitate an understanding of defect production in gallium nitride during lateral epitaxial overgrowth, computer models have been developed to simulate the complete mechanical stress and strain fields. The virtual process included the deposition of a GaN seed layer on a sapphire substrate followed by a silicon dioxide stencil mask through which, and over which, the GaN product layer evolved and then cooled down to room temperature. Lattice mismatch and thermal strain were continuously assessed. Shear stresses on different crystallographic planes were analyzed to predict dislocation generation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Liu, Q. K. K., Hoffmann, A., Siegle, H., Kaschner, A., Thomsen, C., Christen, J. and Bertram, F., Stress analysis of selective epitaxial growth of GaN, Appl. Phys. Lett., 74, 3122 (1999).Google Scholar
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3. Kozawa, T., Kachi, T., Kano, H., Nagase, H., Koide, N. and Manabe, K., Thermal stress in GaN epitaxial layers grown on sapphire substrates, J. Appl. Phys. 77 (9), 4389 (1995).CrossRefGoogle Scholar
4. Dunn, K. A., Babcock, S. E., Stone, D. S., Matyi, R. J., Zhang, Ling and Kuech, T. F., Dislocation Arrangement in a Thick LEO GaN Film on Sapphire, MRS Internet J. Nitride Semicond. Res. 5S1, W2.11 (2000).Google Scholar

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