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Silicon Carbon Alloys Produced by VHF and Conventional PECVD. A Comparison of their Properties.

Published online by Cambridge University Press:  16 February 2011

G. Crovini
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
F. Demichelis
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
C.F. Pirri
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
E. Tresso
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
J. Meier
Affiliation:
Institutde Microtechnique, University of Neuchatel, Breguet 2, CH-2000, Neuchatel, Switzerland
S. Dub Ail
Affiliation:
Institutde Microtechnique, University of Neuchatel, Breguet 2, CH-2000, Neuchatel, Switzerland
A. Shah
Affiliation:
Institutde Microtechnique, University of Neuchatel, Breguet 2, CH-2000, Neuchatel, Switzerland
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Abstract

The Very High Frequency (70 MHz) PECVD has recently proven its ability to produce Amorphous silicon with high deposition rates (10 Å/s) without affecting the quality of the Material. A comparative study of the optoelectronic properties of undoped silicon carbon alloys produced by Very High Frequency and by conventional RF (13.56 MHz) is carried out. Conductivity, infrared absorption, optical transmission and deep defect densities via PDS and ESR have been Measured. Deposition parameters under study aie methane fraction and hydrogen dilution. In contrast to conventional PECVD, we observe for VHF depositions an increase of the deposition rate with the addition of Methane. Larger energy gap and smaller Urbach energy values seem to indicate a better incorporation of carbon in the VHF case. A study of the degradation induced by light is also presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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