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SiC-based 1D Nanostructures

Published online by Cambridge University Press:  18 July 2013

Maelig Ollivier
Affiliation:
Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France IMEP-LAHC Grenoble INP - Minatec: 3, rue Parvis Louis Néel - BP 257 - F38016 Grenoble Cedex 1, France SIMaP, Grenoble-INP, CNRS, UJF, 1130 rue de la piscine, BP 75, 38402 Saint Martin d’Hères, France
Laurence Latu-Romain
Affiliation:
Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France
Mickaël Martin
Affiliation:
Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France
Arnaud Mantoux
Affiliation:
SIMaP, Grenoble-INP, CNRS, UJF, 1130 rue de la piscine, BP 75, 38402 Saint Martin d’Hères, France
Edwige Bano
Affiliation:
IMEP-LAHC Grenoble INP - Minatec: 3, rue Parvis Louis Néel - BP 257 - F38016 Grenoble Cedex 1, France
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Abstract

Thanks to an original approach based on the carburization of silicon nanowires, silicon carbide-based one dimensional nanostructures – SiC nanotubes, Si-SiC core-shell nanowires and SiC nanowires – have been synthesized. The original process, which relies on controlling the out-diffusion of Si atoms through SiC, can be monitored by the temperature, the pressure and the time of carburization. These SiC-based 1D nanostructures have been characterized by SEM, FIB-SEM and TEM microscopies and also Raman spectroscopy. Bio-nano-sensors, nano-Field-Effect-Transistors (nano-FETs) or gas sensors may be some applications for these nanostructures.

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Copyright © Materials Research Society 2013 

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