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Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Jong-Hee Kim
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Gye Mo Yang
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Sung Chul Choi
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Ji Youn Choi
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Hyun Kyung Cho
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Kee Young Lim
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Hyung Jae Lee
Affiliation:
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, Korea
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Abstract

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040°C. Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 x 1018 cm-3

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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