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Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

Published online by Cambridge University Press:  01 February 2011

Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jsh@emlab.snu.ac.kr
Jae-Hoon Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jsh@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jsh@emlab.snu.ac.kr
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Abstract

A short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

[1] Sameshima, T., Usui, S., and Sekiya, M., IEEE Electron Device Lett., 7, 276, 1986 CrossRefGoogle Scholar
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[5] Jeon, J. H., Han, M. K. et al., IEDM'2000, 213, 2000 Google Scholar

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Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer
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