Skip to main content Accessibility help
×
Home

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al2O3 by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

A. Suárez-García
Affiliation:
Instituto de Optica, C.S.I.C., Serrano 121, 28006, Madrid, Spain
J-P. Barnes
Affiliation:
Department of Materials, Oxford University, Parks Road, Oxford, OX1 3PH, UK
R. Serna
Affiliation:
Department of Materials, Oxford University, Parks Road, Oxford, OX1 3PH, UK
A. K. Petford-Long
Affiliation:
Department of Materials, Oxford University, Parks Road, Oxford, OX1 3PH, UK
C. N. Afonso
Affiliation:
Instituto de Optica, C.S.I.C., Serrano 121, 28006, Madrid, Spain
D. Hole
Affiliation:
University of Sussex, Pevensey Building, Brighton, BN1 9QH, UK
Get access

Abstract

The effect of the laser energy density used to deposit Bi onto amorphous aluminum oxide (a-Al2O3) on the growth of Bi nanocrystals has been investigated using transmission electron microscopy of cross section samples. The laser energy density on the Bi target was varied by one order of magnitude (0.4 to 5 J cm-2). Across the range of energy densities, in addition to the Bi nanocrystals nucleated on the a-Al2O3 surface, a dark and apparently continuous layer appears below the nanocrystals. Energy dispersive X-ray analysis on the layer have shown it is Bi rich. The separation from the Bi layer to the bottom of the nanocrystals on top is consistent with the implantation range of Bi species in a-Al2O3. As the laser energy density increases, the implantation range has been measured to increase. The early stages of the Bi growth have been analyzed in order to determine how the Bi implanted layer develops.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Pulsed Laser Deposition of Thin Films, edited by Chrisey, D. B. and Hubler, G. K. (John Wiley & Sons, New York, 1994)Google Scholar
2 Afonso, C. N., in Insulating Materials for Optoelectronics (World Scientific, Singapore, 1995), Chap. 1Google Scholar
3 Serna, R., Gonzalo, J., Suárez-García, A., Afonso, C. N., Barnes, J. P., Petford-Long, A. K., Doole, R. C., and Hole, D., J. of Microscopy 201, 250255 (2001).CrossRefGoogle Scholar
4 Serna, R., Sande, J. C. G. de, Ballesteros, J. M., and Afonso, C. N., J. Appl. Phys 84, 45094516 (1998).CrossRefGoogle Scholar
5 Barnes, J. P., Petford-Long, A. K., Doole, R. C., Serna, R., Gonzalo, J., Suárez-García, A, Afonso, C. N., and Hole, D., Nanotechnology 13, 465 (2002)CrossRefGoogle Scholar
6 Barnes, J-P., Petford-Long, A.K., Suarez-Garcia, A. and Serna, R., J. Appl. Phys. 93, vol 10, (2003) (to be published)Google Scholar
7 Krebs, H. U., Stormer, M., Fahler, S., Bremert, O., Hamp, H., Pundt, A., Teichler, H., Blum, W., and Metzger, T. H., Appl. Surf. Sci. 109, 563 (1997)CrossRefGoogle Scholar
8 Sturm, K. and Krebs, H. U., J. Appl. Phys. 90, 1061 (2001)CrossRefGoogle Scholar
9 Gurtfeld, R. J. von and Dreyfus, R. W., Appl. Phys. Lett. 54, 1212 (1989)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 10 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 17th January 2021. This data will be updated every 24 hours.

Hostname: page-component-77fc7d77f9-xz9qf Total loading time: 1.745 Render date: 2021-01-17T04:25:03.665Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Sun Jan 17 2021 03:53:25 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": true, "languageSwitch": true, "figures": false, "newCiteModal": false, "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al2O3 by Pulsed Laser Deposition
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al2O3 by Pulsed Laser Deposition
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al2O3 by Pulsed Laser Deposition
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *