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Self-Interstitial Supersaturation During Ostwald Ripening of End-of-Range Defects in Ion-Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

M. Seibt
Affiliation:
IV. Physikalisches Institut der Georg-August Universität Göttingen and Sonder-forschungsbereich 345, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of Germany
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Abstract

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows to compare the time dependent self-interstitial supersaturation during postimplantation annealing in the presence of Frank-type stacking faults with that in the presence of {311} - defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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Self-Interstitial Supersaturation During Ostwald Ripening of End-of-Range Defects in Ion-Implanted Silicon
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