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Self-Interstitial Supersaturation During Ostwald Ripening of End-of-Range Defects in Ion-Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

M. Seibt
M. Seibt
Affiliation:
IV. Physikalisches Institut der Georg-August Universität Göttingen and Sonder-forschungsbereich 345, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of Germany
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Abstract

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows to compare the time dependent self-interstitial supersaturation during postimplantation annealing in the presence of Frank-type stacking faults with that in the presence of {311} - defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 109
Copyright
Copyright © Materials Research Society 1996

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References

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Self-Interstitial Supersaturation During Ostwald Ripening of End-of-Range Defects in Ion-Implanted Silicon
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