Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-5bf98f6d76-fsmsh Total loading time: 0.24 Render date: 2021-04-20T18:05:06.768Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Schottky Contact Characterization of Thin, Excimer Laser Grown Gaas Oxides

Published online by Cambridge University Press:  26 February 2011

M.T. Schmidt ,
C.F. Yu ,
D.V. Podlesnik ,
E.S. Yang  and
R.M. Osgood Jr.
M.T. Schmidt
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
C.F. Yu
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
D.V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
E.S. Yang
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
Get access

Abstract

Thin GaAs-oxide layers have been formed on GaAs (100) surfaces using deep UV light to enhance the oxidation reactions. Two different oxidation reactions were compared by using UV light of wavelengths below and above the O2 dissociation limit, viz, 248 nm and 193 nm respectively. For the light above the O2 dissociation limit which causes ozone formation, oxides formed by direct surface illumination were compared to oxides formed by illumination parallel to the GaAs surface. Metal contacts were deposited in situ to study the effect of the various thin oxides on the Schottky barrier height of contacts to GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 421
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1 Woodall, J.M. and Freeouf, J.L., J. Vac. Sci. Technol. 19, 794 (1981).CrossRefGoogle Scholar
2 Waldrop, J.R., Appl. Phys. Lett. 47, 1301 (1985).CrossRefGoogle Scholar
3 Schmidt, M.T., Podlesnik, D.V., Evans, H.L., Yu, C.F., Yang, E.S., and Osgood, R.M. Jr., J. Vac. Sci. Technol. A 6, in press.Google Scholar
4 Childs, R. B., Ruths, J. M., Sullivan, T. E., and Fonash, S. J., J. Vac. Sci. Technol. 15, 1397 (1978).CrossRefGoogle Scholar
5 Van Meirhaeghe, R. L., Laflere, W. H., and Cardon, F., Solid-State Electron. 25, 1089 (1982).CrossRefGoogle Scholar
6 Yu, C.F., Schmidt, M.T., Podlesnik, D.V., and Osgood, R.M. Jr., J. Vac. Sci. Technol. B5, 1087 (1987).CrossRefGoogle Scholar
7 Chang, R. P. H., Coleman, J. J., Polak, A. J., Feldman, L. C., and Chang, C. C., Appl. Phys. Lett. 34, 237 (1979).CrossRefGoogle Scholar
8 Schafer, S.A. and Lyon, S.A., J. Vac. Sci. Technol. 19, 494 (1981).CrossRefGoogle Scholar
9 Petro, W.G., Hino, I., Eglash, S., Lindau, I., Su, C.Y., and Spicer, W.E., J. Vac. Sci. Technol. 21, 405 (1982).CrossRefGoogle Scholar
10 Bartels, F. and Monch, W., Surf. Sci. 143, 315, (1984).CrossRefGoogle Scholar
11 Yu, C.F., Schmidt, M.T., Podlesnik, D.V., and Osgood, R.M. Jr, J. Vac. Sci. Technol. B 5, 1087 (1987).CrossRefGoogle Scholar
12 Ingrey, S., Lau, W.M., and McIntyre, N.S., J. Vac. Sci. Technol. A4, 984 (1986).CrossRefGoogle Scholar
13 Ready, J.F., Effects of High Power Laser Irradiation (Academic Press, New York, 1971).Google Scholar
14 Yu, C.F., Podlesnik, D.V., Schmidt, M.T., Gilgen, H.H., and Osgood, R.M. Jr., Chem. Phys. Lett. 130, 301 (1986).CrossRefGoogle Scholar
15 Sze, S.M., Physics of Semiconductor Devices (Wiley, New York, 1981).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 20th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Schottky Contact Characterization of Thin, Excimer Laser Grown Gaas Oxides
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Schottky Contact Characterization of Thin, Excimer Laser Grown Gaas Oxides
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Schottky Contact Characterization of Thin, Excimer Laser Grown Gaas Oxides
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *