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Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals

Published online by Cambridge University Press:  26 February 2011

X. Liu ,
E. R. Weber ,
D. F. Ogletree ,
M. Salmeron  and
T. Slupinski
X. Liu
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
D. F. Ogletree
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
M. Salmeron
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. Slupinski
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw, Poland
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Abstract

We report cross-sectional scanning tunneling microscopy studies of GaAsP single crystals grown by the Liquid Encapsulated Czochralski technique. We show that the two group-V elements can be clearly distinguished, which is attributed to the difference in energies of surface dangling bond states of As and P. Our atomic scale imaging results show alloy composition in agreement with spectroscopic studies. They also provide valuable information about atomic scale alloy fluctuations and clustering effects.

Type
Research Article
Information
MRS Online Proceedings Library Archive , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 83
Copyright
Copyright © Materials Research Society 1995

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References

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