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Sample Geometry Effects on Electric-Field-Induced Displacements in Piezoelectric Thin Films Measured by Atomic Force Microscopy

Published online by Cambridge University Press:  01 February 2011

Hirotake Okino
Affiliation:
Department of Communications Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka, Kanagawa 239–8686, Japan
Hirofumi Matsuda
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8568, Japan
Takashi Iijima
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8568, Japan
Shintaro Yokoyama
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Takashi Yamamoto
Affiliation:
Department of Communications Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka, Kanagawa 239–8686, Japan
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Abstract

Electric-field-induced displacements of PZT film capacitor Pt/PZT(5μm)/Pt/SiO2/Si(100) were calculated by finite element method with various parameters of sample geometry: the diameter of top electrode φ TE ranging from 0.2 μ m to 1000 μ m and whether PZT film was continuous or side-etched. If φ TE was larger than 40μ m, surface longitudinal displacement (corresponding to AFM-measured strain) was not equal to net longitudinal displacement of PZT film, including a contribution of the bending motion of substrate. In contrast, if φ TE was smaller than 4μ m and PZT film was continuous, effective d33 evaluated from net longitudinal displacement was smaller than intrinsic d33, because the side PZT film clamped the edge of the capacitor disk and prevented the whole disk from elongating longitudinally. It was also revealed that d33 value calculated from net longitudinal displacement of PZT film depended on the Poisson's ratio of PZT and was not equal to intrinsic d33, excluding the case that φ TE was smaller than 4μ m and PZT film was side-etched. In conclusion, it is suggested that smaller φ TE (< 4μ m, in our case) and side-etch treatment permit a precision measurement of d33; however this condition is difficult to be satisfied experimentally.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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Sample Geometry Effects on Electric-Field-Induced Displacements in Piezoelectric Thin Films Measured by Atomic Force Microscopy
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Sample Geometry Effects on Electric-Field-Induced Displacements in Piezoelectric Thin Films Measured by Atomic Force Microscopy
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