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Room-Temperature UHV-Deposited Titanium Monoxide Films on Oxidized Polycrystalline Copper

Published online by Cambridge University Press:  21 March 2011

V. M. Fuenzalida
Affiliation:
Departamento de Física, Av. Blanco Encalada 2008, Santiago 6511226, Chile
C. R. Grahmann
Affiliation:
Departamento de Física, Av. Blanco Encalada 2008, Santiago 6511226, Chile
C. Herrera
Affiliation:
Departamento de Física, Av. Blanco Encalada 2008, Santiago 6511226, Chile
R. A. Zárate
Affiliation:
Departamento de Física, Av. Blanco Encalada 2008, Santiago 6511226, Chile
C. Avila
Affiliation:
IDIEM, Plaza Ercilla 883, Santiago 6511226, Chile
M.E. Pilleux
Affiliation:
Universidad de Chile Facultad de Ciencias Físicas y Matemáticas
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Abstract

Polycrystalline copper films thicker than 100 nm were evaporated on silicon wafers with their native oxide under ultrahigh vacuum conditions leading to an rms roughness of ~2 nm of the copper film. X-ray photoelectron spectroscopy (XPS) revealed a clean copper surface with only traces of oxygen. The samples were exposed to air, leading to an oxide film consisting of CuO. TiO films were subsequently deposited onto the oxidized copper films from a resistively heated tungsten boat with the substrate at room temperature. The TiO films exhibited good adherence and were amorphous. XPS measurements revealed that the TiO films were contamination-free and that the first layers of TiO reduced the thin native oxide of the copper substrate from Cu(II) into Cu(I) or Cu(0) and transformed the TiO into TiO2 at the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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Room-Temperature UHV-Deposited Titanium Monoxide Films on Oxidized Polycrystalline Copper
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