Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-s65px Total loading time: 0.268 Render date: 2021-03-08T07:10:10.798Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Room Temperature Negative Differential Resistance in Nanoscale Molecular

Published online by Cambridge University Press:  21 March 2011

J. Chen
Affiliation:
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520
W. Wang
Affiliation:
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520
M. A. Reed
Affiliation:
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520
A. M. Rawlett
Affiliation:
Center for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, TX 77005
D. W. Price
Affiliation:
Center for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, TX 77005
J. M. Tour
Affiliation:
Center for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, TX 77005
Get access

Abstract

Molecular devices utilizing active self-assembled monolayer (SAM) (containing nitroamine (2′-amino-4-ethynylphenyl-4′-ethynylphenyl-5′-nitro-1-benzenethiolate) and nitro (4-ethynylphenyl-4′-ethynylphenyl-2′-nitro-1-benzenethiolate) redox center) as the active component are reported. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ratio in excess of 1000:1 at low temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Esaki, L., Phys. Rev. 109, 603 (1958).CrossRefGoogle Scholar
2. Chang, L. L., Esaki, L., Tsu, R., Appl. Phys. Lett. 24, 593 (1974).CrossRefGoogle Scholar
3. Sollner, T. C. L. G. et al. , Appl. Phys. Lett. 43, 588 (1983).CrossRefGoogle Scholar
4. Tsuchiya, M., Sakaki, H., Yoshino, J., Jpn. J. Appl. Phys. 24, L466 (1985).CrossRefGoogle Scholar
5. Sze, S. M. (Eds), High-Speed Semiconductor Devices, (Wiley, New York, 1990).Google Scholar
6. Zhou, C. et al. , Appl. Phys. Lett. 71, 611 (1997).CrossRefGoogle Scholar
7. Chen, J., Reed, M. A., Rawlett, A. M., Tour, J. M., Science 286, 1550 (1999).CrossRefGoogle Scholar
8. Moroni, M. et al. , Macromolecules 1997, 30, 1964.CrossRefGoogle Scholar
9. Sonogashira, K., Tohda, Y., and Hagihara, N., Tetraherdon Lett. 4467 (1975).Google Scholar
10. Pearson, D. L. and Tour, J. M., J. Org. Chem. 62, 1376 (1997).CrossRefGoogle Scholar
11. Tour, J. M. et al. , J. Am. Chem. Soc. 117, 9529 (1995).CrossRefGoogle Scholar
12. Zhou, C., thesis, Yale University (1999).Google Scholar
13. Smet, J. H., Broekaert, T. P. E., and Fonstad, C. G., J. Appl. Phys. 71, 2475 (1992)CrossRefGoogle Scholar
14. Söderström, J. R., Chow, D. H., and McGill, T. C., J. Appl. Phys. 66, 5106 (1989)CrossRefGoogle Scholar
15. Day, J. et al. , J. Appl. Phys. 73, 1542 (1993).CrossRefGoogle Scholar
16. Tsai, H. H. et al. , IEEE Elec. Dec. Lett. 15, 357 (1993).CrossRefGoogle Scholar
17. The case where Z = SH was avoided due to anomalies that could be caused through electrochemical disulfide formation and cleavage events.Google Scholar
18. Deshpande, M. R. et al. , Phys. Rev. Lett. 76, 1328 (1996).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 9 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 8th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Room Temperature Negative Differential Resistance in Nanoscale Molecular
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Room Temperature Negative Differential Resistance in Nanoscale Molecular
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Room Temperature Negative Differential Resistance in Nanoscale Molecular
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *