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Remote Plasma Enhanced Chemical Vapor Deposition of TiOx Films from Titanium Tetraisopropoxide

Published online by Cambridge University Press:  21 March 2011

Masatoshi Nakamura
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University
Shinichi Kato
Affiliation:
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu, 432-8011, Japan
Toru Aoki
Affiliation:
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu, 432-8011, Japan
Yoshinori Hatanaka
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu, 432-8011, Japan
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Abstract

TiOx thin films were prepared from titanium tetraisopropoxide (Ti-(O-i-C3H7)4, TTIP) in a remote plasma enhanced chemical vapor deposition (RPE-CVD) using a mixture of hydrogen/oxygen plasma gas. Emission spectra suggested that H-radicals dissociated TTIP molecules in gas phase. By mixing with oxygen, H-radical density was increased with the correlation effect to result in enhancement of deposition rate. Deposition rate was also influenced by OH-radicals. OH-radicals caused deactivation of precursors and hence suppressed Ti-O-Ti bond formation in gas phase. The highest deposition rate of 11 nm/min, which was two orders higher than that for the case of single gas plasma, was achieved in the case of mixture gas ratio of 20% oxygen and 80% hydrogen. Surface reaction due to the heated substrate did not affect the deposition rate though the film structure was remarkably changed. It was demonstrated that for RPE-CVD process, oxygen/hydrogen mixture gas plasma was effective for obtaining high deposition rate, and also H-to-OH radical density ratio was an important factor to control the deposition rate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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