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The Reliability of Multilevel Metallization on InGaAs/GaAs Layers

Published online by Cambridge University Press:  25 February 2011


Edward Y. Chang
Affiliation:
Institute of Materials Science and Engineering
J.S. Chen
Affiliation:
Institute of Materials Science and Engineering
J.W. Wu
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
K.C. Lin
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.

Abstract

Non-alloyed ohmic contacts using Ti/Pt/Au and Ni/Ge/Au on InGaAs/GaAs layers grown by Molecular Beam Epitaxy (MBE) have been investigated. The n-type InGaAs film has a doping concentration higher than 1X1019 cm-3. Specific contact resistance below 2X10-7 Ωcm2 could be easily achieved with Ti/Pt/Au. Due to the layer intermixing and outdiffusion of In and Ga, the specific contact resistance and sheet resistance increase after thermal treatment. When Ni/Ge/Au is used as the contact metal, the outdiffusion of In and Ga atoms is more severe than that of Ti/Pt/Au. After annealing at 450°C for two minutes, the Au4In formed and the characteristics of the contact became worse. All the phenomena illustrated above have been observed and investigated by Transmission Line Model, X-ray diffraction, Auger Electron Spectroscopy and Secondary Ion Mass Spectrum. As far as the thermal stability is concerned, it is convinced that Ti/Pt/Au is the best one of these two non-alloyed ohmic contact studied.


Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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