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Reliability Detection of Process-Induced Metallization Defects in GaAs Devices

Published online by Cambridge University Press:  18 May 2015

Steve H. Kilgore
Affiliation:
Technology Reliability & Quality, Freescale Semiconductor, Inc., Tempe, AZ 85284, USA
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Abstract

Process-induced defects in electroplated Au interconnect metallization on GaAs devices were detected during the course of reliability testing. Abnormally high lognormal sigma values (σ > 0.7) indicated the existence of a bi-modal failure mechanism. A distinct early lifetime failure mode was observed along with the intrinsic electromigration metallization wear-out failure mode. Physical characterization of the electroplated Au film revealed as-deposited nanoscale voids. Elimination of these voids through process improvement as well as suggested mechanisms for the early failures are discussed.

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Copyright
Copyright © Materials Research Society 2015 

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References

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Kilgore, S., “Electromigration Reliability of Passivated Gold Interconnects for GaAs Devices,” ECS Transactions, vol. 61, pp. 5763, September 22, 2014 (2014).CrossRefGoogle Scholar
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