Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE

Published online by Cambridge University Press:  25 February 2011

K. C. Rajkumar ,
P. Chen  and
A. Madhukar
K. C. Rajkumar
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
P. Chen
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
A. Madhukar
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
Get access

Abstract

Homoepitaxy on the {1ll} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 315
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1 Hayakawa, T., Kondo, M., Suyama, T., Takahashi, K., Yamamoto, S. and Hijikata, T., Jap. J. App. Phys., 26, L302 (1987)CrossRefGoogle Scholar
2 Smith, D. L., Solid State Commun., 57, 919 (1986)CrossRefGoogle Scholar
3 Caridi, E. A., Chang, T. Y., Goosen, K. W. and Eastman, L. F., Appl. Phys. Lett., 56, 660 (1990)CrossRefGoogle Scholar
4 Shank, S. M. and Wicks, G. W., Proc. of the viInternational MBE Conf., (to be published in J. Crystal Growth)Google Scholar
5 Rajkumar, K. C., Chen, P. and Madhukar, A., J. App. Phys. (to be published)Google Scholar
6 Cho, A. Y., Panish, M. B. and Hayashi, I., 1970 Svmp. on GaAs. p18 Google Scholar
7 Imamoto, H. Sato, F., Imanaka, K. and Shimma, M., Appl. Phys. Lett., 55, 115 (1989)CrossRefGoogle Scholar
8 Cho, A. Y., J. Appl. Phys., 41, 2780 (1970)CrossRefGoogle Scholar
9 Rajkumar, K. C., Chen, P. and Madhukar, A., submitted to Proc. of 20th International Conf. on Phys. of Semiconductors (Aug. 6–10, 1990; Thessaloniki, Greece)Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 23rd January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-7fh6l Total loading time: 0.287 Render date: 2021-01-23T15:07:52.029Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *