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Reduction of Defect Fluxes Using Dual-Ion-Beam Processing

Published online by Cambridge University Press:  22 February 2011

A. Iwase
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave. Argonne IL 60439 Japan Atomic Energy Research Institute, Tokai-mura, Naka-gun, Ibaraki, 319-11, Japan
L. E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave. Argonne IL 60439
P. M. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave. Argonne IL 60439
P. R. Okamoto
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave. Argonne IL 60439
H. Wiedersich
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave. Argonne IL 60439
L. Funk
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave. Argonne IL 60439
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Abstract

Radiation-induced segregation (RIS) in Ni-12.7% Si and Cu-1% Au alloys was studied using Rutherford backscattering spectroscopy during He and Ne irradiation at elevated temperatures. During single ion-beam irradiation with 1.5 MeV He, strong RIS of Si toward the surface was observed in Ni-12.7% Si. Simultaneous irradiation with 400 keV Ne and 1.5 MeV He almost completely suppressed the Si segregation, even when the calculated damage production rate by Ne was only a few percent of that by He ions. A similar effect of dual-beam irradiation was observed in the Cu-1% Au alloy, i.e., the rate of near surface Au depletion was strongly reduced under simultaneous irradiation. The present result shows that dual-beam irradiation can be applied to control RIS and RED (Radiation Enhanced Diffusion) during ion beam processing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1 Rehn, L. E. and Okamoto, P. R., in Phase Transformations During Irradiation, edited by Nolfi, F. V. Jr., (Applied Science Publishers, London, 1982) p. 247.Google Scholar
2 Biersack, J. P. and Haggmark, L. G., Nucl. Instxum. Methods 174, 257 (1980).CrossRefGoogle Scholar
3 Hashimoto, T., Rehn, L. E. and Okamoto, P. R., Phys. Rev. B38, 868 (1988).Google Scholar

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